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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3058 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE 600 400 7 30 200 200 -65~200 UNIT V V V A W ae ae Open collector Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=20A; IB=4A IC=20A; IB=4A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V 15 MIN 400 600 7 2SC3058 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V V V 1.0 1.5 10 10 |I |I V V A A DC current gain CHA IN Transition frequency Collector output capacitance E SEM NG IC=20A ; VCE=5V IC=4A ; VCE=10V OND IC TOR UC 50 10 40 30 420 MHz pF IE=0 ; VCB=10V;f=1MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3058 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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